Spin Transport in a Submicron-sized Structure Using Vanadium Metal Masks

초록

A new fabrication method to make a submicron-sized lateral spin-valve device is presented. In this method, magnetic patterns with nano-scaled channel lengths are implemented with Vanadium hard mask. For the non-local geometry, a Delta R of 4 m Omega is detected and for the local spin-valve geometry, magnetoresistance of 0.1% is obtained at T = 10 K. Due to the sharp magnetization switching of the flat ferromagnet, clear spin signal transitions between parallel and antiparallel alignments are observed. A quantitative analysis, including the spin-orbit interaction parameter, indicates the feasibility of spin transistor applications.

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