Achieving High Field-Effect Mobility Exceeding 90 cm2/Vs in a-IGZTO Transistors with Excellent Reliability

초록

In this letter, amorphous indium-gallium-zinc-tin oxide ( {a} -IGZTO) thin-film transistors (TFTs) were characterized with a bottom gate structure, where a single target with three cation composition ratios were used to deposit the a-IGZTO channel layer. Remarkably, {a} -In {{0.60}} Ga {{0.14}} Zn {{0.20}} Sn {{0.06}}\text{O} TFTs exhibited exceptional performance, featuring a significantly high field-effect mobility of 90.2 cm2/Vs, a low subthreshold swing of 0.10 V/decade, a threshold voltage ( {V} {\text {TH}} ) of -0.40 V, and an {I} {\text {ON/OFF}} ratio of 3\times 10{{8}}. Furthermore, the TFTs demonstrated excellent bias temperature stress (BTS) reliability, with minimal variations in {V} {\text {TH}} ( \Delta {V}{\text {TH}} ) less than 0.08 V under negative and positive bias temperature stress at 60 °C for 1 hour. The impressive performance and reliability observed in these TFTs can be attributed to the synergistic percolation of In {\text {3+}} and Sn {\text {4+}} and the beneficial hydrogen-doping effect near Sn cations.

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