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Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification
- Kim, Hyeon-A;
- Kim, Jeong Oh;
- Hur, Jae Seok;
- Son, Kyoung-Seok;
- Lim, Jun Hyung;
- ... Jeong, Jae Kyeong;
- 외 1명
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62초록
The effects of chamber pressure (P-C) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. Smoother and denser IGTO films were obtained with decreasing P-C, which were explained based on the enhanced kinetic energy of sputtered particles due to fewer collisions with the plasma atmosphere. The resulting IGTO thin-film transistor exhibited a high mobility of 35.0 cm(2)/Vs, subthreshold gate swing of 0.17 V/decade, threshold voltage (V-TH) of -0.45 V, and I-ON/OFF ratio >10(8), even at a low annealing temperature of 150 degrees C.
키워드
Densification; indium gallium tin oxide (IGTO); low temperature; mobility; sputtering; thin-film transistor (TFT); HIGH-PERFORMANCE; OXIDE; FABRICATION; IMPROVEMENT; PRESSURE
- 제목
- Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification
- 저자
- Kim, Hyeon-A; Kim, Jeong Oh; Hur, Jae Seok; Son, Kyoung-Seok; Lim, Jun Hyung; Cho, Johann; Jeong, Jae Kyeong
- 발행일
- 2018-11
- 유형
- Article
- 권
- 65
- 호
- 11
- 페이지
- 4854 ~ 4860