반도체 회로에서의 내방사선 설계 방법 연구 동향

초록

To secure reliability of circuits from radiation-induced degradation or malfunction such as Single-Event Effects (SEE) and Total Ionizing Dose (TID) has become more and more important. In this paper, several recent solutions are reviewed among various techniques for mitigating radiation effects. Main contents include 1) the SEE mitigation utilizing the properties of the inverse mode, 2) the SEE-mitigation circuit based on Electrostatic Discharge (ESD) protection circuit, 3) the Radiation-Hardened-By-Design (RHBD) Flip-Flops (FFs) to prevent SEE, 4) the Analog Single-Event Transients (ASET) detection in a DC-DC converter, and 5) P-edge NMOS for TID mitigation. Operation principles of each techniques are explained and discussed in terms of improvements in radiation hardening.

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