Properties of ZnSe:Te,O Crystals Grown by Bridgman-Stockbarger Method

  • Lee, Woo Gyo
  • Kim, Yong Kyun
  • Kim, Jong Kyung
  • Starzhinskiy, Nicolai
  • Ryzhikov, Vladimir
  • 외 1명
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초록

Zinc selenide crystals were grown in graphite crucibles by the Bridgman-Stockbarger method in a vertical compression furnace under argon pressure of 5x10(6) Pa. From the absorption spectra, the band gap energies of the ZnSe single crystals were calculated by a linear fitting process. The maximum wavelength of the emission spectrum of the ZnSe:Te,O scintillator was 630 nm, which was well matched with the response wavelength of the Si photodiode. The energy resolution of the ZnSe:Te,0 scintillator was 11.9% when it was exposed to (CS)-C-137 gamma-ray. Its size was 10 x 10 x 1 mm(3). The afterglow level of the ZnSe:Te,O scintillator after 5 ms was 0.023%. The relative light output of the ZnSe:Te,O scintillator was 2.167 times higher than CsI:Tl. The luminescence decay time of the ZnSe:Te,O scintillator has two exponential components with 27 and 84 mu s time constant.

키워드

ZnSesemiconductor scintillatorabsorptionemissionafterglowZNSE(TE)CWO
제목
Properties of ZnSe:Te,O Crystals Grown by Bridgman-Stockbarger Method
저자
Lee, Woo GyoKim, Yong KyunKim, Jong KyungStarzhinskiy, NicolaiRyzhikov, VladimirGrinyov, Boris
DOI
10.1080/00223131.2008.10875921
발행일
2008-06
유형
Article; Proceedings Paper
저널명
Journal of Nuclear Science and Technology
페이지
579 ~ 581