Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory

  • Lee, Jong-Dae
  • Seung, Hyun-Min
  • Kwon, Kyoung-Cheol
  • Park, Jea-Gun
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초록

In summary, we successfully developed the polymer nonvolatile 4F(2) memory-cell. It was based on nonvolatile memory characteristics such as memory margin and retention time, which was observed in memory-cell embedded with Ag nanocrystals in PVK layer. The nonvolatile memory characteristics depend on the shape, distribution and isolation of Ag nanocrystals. Accordingly, the thickness of Ag film has an important role in optimizing the Ag nanocrystals. Therefore, the polymer nonvolatile memory-cell is fabricated by appropriate thickness of film and need an improvement of interface between Ag nanocrystals and PVK for sufficient nonvolatile memory characteristics.

키워드

polymer nonvolatilememorynanocrystalELECTRICAL BISTABILITYTHIN-FILMSYSTEM
제목
Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory
저자
Lee, Jong-DaeSeung, Hyun-MinKwon, Kyoung-CheolPark, Jea-Gun
DOI
10.1587/transele.E94.C.850
발행일
2011-05
유형
Article
저널명
IEICE Transactions on Electronics
E94C
5
페이지
850 ~ 853