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초록
Organic bistable devices (OBDs) fabricated utilizing ZnO quantum dots (QDs) embedded in a poly(methyl methacrylate) (PMMA) layer were fabricated by using a spin-coating technique. Transmission electron microscopy images revealed that 5-nm-diameter ZnO QDs were formed inside the PMMA polymer layer. Current-voltage (I-V) measurements on Al/ZnO QDs embedded in PMMA layer/indium-tin-oxide devices at 300 K showed electrical bistability. The maximum ON/OFF ratio of the current bistability for the OBDs was as large as 4x10(4). Carrier transport mechanisms for the OBDs are described by using several models to fit the experimental I-V data.
키워드
carrier mobility; colloids; II-VI semiconductors; indium compounds; nanocomposites; organic-inorganic hybrid materials; polymers; random-access storage; semiconductor quantum dots; spin coating; tin compounds; zinc compounds; MEMORY; BISTABILITY; EMISSION
- 제목
- Carrier transport mechanisms of organic bistable devices fabricated utilizing colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites
- 저자
- Son, Dong Ick; You, Chan Ho; Jung, Jae Hun; Kim, Tae Whan
- 발행일
- 2010-07
- 유형
- Article
- 권
- 97
- 호
- 1
- 페이지
- 1 ~ 3