Enhancement of light extraction in GaN-based light-emitting diodes by Al2O3-coated ZnO nanorod arrays

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초록

We report on the improvement of light extraction efficiency in blue light-emitting diodes (LEDs) by the use of Al2O3/ZnO core/shell nanorods (NRs) grown on the surface of the LED epi-structure. The electroluminescence intensity at a current injection of 20 mA of LEDs with 40 nm-thick Al2O3-coated ZnO NR arrays is 2.1 and 4.0 times than those of LEDs with bare ZnO NRs and no NRs, respectively. The enhanced light extraction of LEDs with Al2O3-coated ZnO NRs can be attributed to an increase in transmission and improved light extraction probability for photons generated in blue LEDs due to a reduction of Fresnel reflection loss.

키워드

GaNLight-emitting diodesAl2O3/ZnONano-hybridLight extractionAluminaAluminum oxideDiodesElectroluminescenceGallium nitrideII-VI semiconductorsIII-V semiconductorsLight
제목
Enhancement of light extraction in GaN-based light-emitting diodes by Al2O3-coated ZnO nanorod arrays
저자
Park, JinsubShin, Dong SuKim, Do-Hyun
DOI
10.1016/j.jallcom.2014.05.019
발행일
2014-10
유형
Article
저널명
Journal of Alloys and Compounds
611
페이지
157 ~ 160