Electrical bistabilities and operating mechanisms of memory devices fabricated utilizing ZnO quantum dot-multi-walled carbon nanotube nanocomposites

  • Li, Fushan
  • Son, Dong Ick
  • Cho, Sung Hwan
  • Kim, Tae Whan
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초록

Transmission electron microscopy images showed that the ZnO quantum dots (QDs) were conjugated with multi-walled carbon nanotubes (MWCNTs). Bistable memories utilizing an ensemble of the ZnO QD-MWCNT heterostructures were developed and the storage capability of the devices was significantly enhanced due to the conjugation of the ZnO QDs and the MWCNTs. Operating mechanisms of memory devices fabricated utilizing the ZnO QD-MWCNT heterostructures are described on the basis of the current-voltage results. The memory devices exhibited excellent environmental stability at ambient conditions.

키워드

Chemical sensorsCrystalsData storage equipmentMultiwalled carbon nanotubes (MWCN)Optical waveguidesSemiconducting zinc compoundsSemiconductor quantum dotsTransmission electron microscopyZinc oxidecarbon nanotubenanocompositenanomaterialquantum dotzinc oxidenanomaterialAmbient conditionsBistable memoriesCurrent voltagesElectrical bistabilitiesEnvironmental stabilitiesHeterostructuresMemory devicesMulti-walled carbon nanotubesOperating mechanismsQuantum dotsStorage capabilitiesTransmission electron microscopy imagesZnoZno quantum dotsarticleelectricitynanofabricationnanotechnologypriority journaltransmission electron microscopychemistryconformationcrystallizationelectrochemistryequipmentequipment designinformation retrievalinstrumentationmacromoleculematerials testingmethodologynanotechnologyparticle sizesurface propertyultrastructureCarbon nanotubes
제목
Electrical bistabilities and operating mechanisms of memory devices fabricated utilizing ZnO quantum dot-multi-walled carbon nanotube nanocomposites
저자
Li, FushanSon, Dong IckCho, Sung HwanKim, Tae Whan
DOI
10.1088/0957-4484/20/18/185202
발행일
2009-05
유형
Article
저널명
Nanotechnology
20
18
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1 ~ 4