Effect of interface chemical properties on nonvolatile memory characteristics for small-molecule memory cells embedded with Ni nano-crystals surrounded by NiO

  • Seo, Sung-Ho
  • Nam, Woo-Sik
  • Kim, Jae-Suk
  • Lee, Sang-Yi
  • Shim, Tae-Hun
  • 외 1명
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5

초록

We investigated the effect of the chemical properties of the interface on nonvolatile memory characteristics for small-molecule memory cells embedded with Ni nano-crystals surrounded by a NiO tunneling barrier. We used ultra-high voltage TEM, Auger, and XPS to characterize the physical and chemical properties of the interface. It was found that the occurrence of chemical reactions between the small-molecule layers and the surface of the NiO tunneling barrier surrounding the Ni nano-crystals (e.g., NiCO3) conclusively determine nonvolatile memory characteristics such as memory margin (I-on/I-off ratio), retention time, and endurance cycles of writing and erasing.

키워드

Small-moleculeNonvolatile memoryNano-crystalInterface propertyTHIN-FILMSOLAR-CELLSDEVICESBISTABILITYEFFICIENCY
제목
Effect of interface chemical properties on nonvolatile memory characteristics for small-molecule memory cells embedded with Ni nano-crystals surrounded by NiO
저자
Seo, Sung-HoNam, Woo-SikKim, Jae-SukLee, Sang-YiShim, Tae-HunPark, Jea-Gun
DOI
10.1016/j.cap.2009.12.008
발행일
2010-01
유형
Article; Proceedings Paper
저널명
Current Applied Physics
10
1
페이지
E32 ~ E36