Optical properties and deep levels in annealed Si1-xMnx bulk materials

Kwon, Yunhee; Kang, Tae Won; Park, Cheol-Joon; Cho, Hoonyoung; Kim, Tate Whan; Lee, Jooyoung; Wang, Kang L.; Kim, Bo Ock; Kim, Sunmo; Cho, Yong-Hoon

doi:10.1016/j.ssc.2006.07.032

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Optical properties and deep levels in annealed Si1-xMnx bulk materials

Kwon, Yunhee;
Kang, Tae Won;
Park, Cheol-Joon;
Cho, Hoonyoung;
Kim, Tate Whan;
외 5명

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초록

The optical proper-ties and the deep levels in bulk Si1-xMnx formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si1-xMnx samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si1-xMnx material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si1-xMnx showed deep levels related to the interstitial and substitutial sites of the Mn+ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si1-xMnx material.

키워드

semiconductors; impurities in semiconductor; electronic states; optical properties; SEMICONDUCTOR; FERROMAGNETISM; GROWTH; MN

제목: Optical properties and deep levels in annealed Si1-xMnx bulk materials

저자: Kwon, Yunhee; Kang, Tae Won; Park, Cheol-Joon; Cho, Hoonyoung; Kim, Tate Whan; Lee, Jooyoung; Wang, Kang L.; Kim, Bo Ock; Kim, Sunmo; Cho, Yong-Hoon

DOI: 10.1016/j.ssc.2006.07.032

발행일: 2006-10

유형: Article

저널명: Solid State Communications

권: 140

호: 1

페이지: 14 ~ 17