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Challenges of Atomic-Layer-Deposited Oxide Semiconductor Channels beyond PVD: Material, Devices, and M3D Stacked Structures
- Kim, Yoon-Seo;
- Choi, Su-Hwan;
- Oh, Hyejin;
- Hwang, Taewon;
- Park, Jin-Seong
Citations
SCOPUS
0초록
This study explores ALD-based oxide semiconductors, highlighting in-situ composition control, atomic-scale ordering, and interface engineering. High-mobility (>100 cm²/V·s) IGZO and stable p-type SnO (<5 cm²/V·s) devices are achieved via optimized ALD processes. We demonstrate monolithic 3D- stacked complementary transistors and propose N₂O plasma for addressing mobility-stability trade-offs. ALD's pivotal role in scalable, high-performance active-matrix device fabrication is emphasized, showcasing its potential for mass production.
키워드
Atomic Layer Deposition; High field-effect mobility IGZO; Monolithic Stacked Complementary FET; Nitrogen doping; Oxide Semiconductor; ptype SnO; Thin Film Transistor; Atoms; Dielectric devices; Economic and social effects; High electron mobility transistors; Indium alloys; Magnetic semiconductors; Monolithic integrated circuits; MOS devices; Semiconducting aluminum compounds; Semiconducting indium compounds; Semiconductor doping; Thin film circuits
- 제목
- Challenges of Atomic-Layer-Deposited Oxide Semiconductor Channels beyond PVD: Material, Devices, and M3D Stacked Structures
- 저자
- Kim, Yoon-Seo; Choi, Su-Hwan; Oh, Hyejin; Hwang, Taewon; Park, Jin-Seong
- 발행일
- 2025-06
- 유형
- Conference paper
- 권
- 56
- 호
- 1
- 페이지
- 946 ~ 949
- 언어
- ENG
- 분량
- 4 페이지
- ISSN
- E 2168-0159
P 0097-966X