Investigation of Compact Hollow-Anode Discharge Source for Copper Thin Films by Sputtering Processes

초록

A compact hollow-anode discharge (HAD) source with a size of 60 mm in radius and 70 mm in length has been developed to stably generate plasma jets for various sputtering processes in semiconductor and display fabrications. A developed HAD plasma source has been investigated by cylindrical electric probes, and the experimental results were compared to the values of numerical calculations. A uniform density discharge model with a geometry factor was proposed to estimate the profiles of plasma parameters. Owing to the difference of absolute magnitude, even with the similar trend of spatial variation, plasma parameters such as electron temperature (T-e) and plasma density (n(e)) measured at z = 3 cm have been calibrated by the values of numerical calculations at the nozzle entrance (z = 0 cm, at the throat of the jet), and the calibration factors for T-e and n(0) have been deduced by comparing the experimental values to numerical calculations. These are to be explained by the decay mechanism along the axis of the jet with elastic collisions in terms of the mean free path. The developed HAD plasma source was tested for the deposition of Cu thin films with an optimized condition as a plausible application to sputtering processes.

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