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초록
A fully integrated triple-mode CMOS low noise amplifier applicable to Software de- fined Radio (SDR) handset is presented. The target frequency bands include 1.84 GHz-1.87 GHz for CDMA 2000 1x, 2.11 GHz-2.17 GHz for WCDMA, and 2.3 GHz-2.4 GHz for WiBro. The selection of operating frequency band is implemented by four switched-capacitor circuits, where every two of them located at the input and output matching network, each switch is realized by NMOS transistor. The post layout simulation displays the input reflection coefficient and narrow band voltage gain of the LNA in three frequency bands of interest. The analysis of input matching, noise matching, and linearity of the LNA is discussed in this paper.
키워드
Frequency bands; Switched capacitor networks; Switching circuits; CMOS low noise amplifiers; Fully integrated; Input and outputs; Input reflection coefficient; Operating frequency bands; Post layout simulation; Switched capacitor circuits; Target frequencies; Low noise amplifiers
- 제목
- The design of triple-mode low noise amplifier for SDR system
- 저자
- Liu, Yang; Choi, Sungju; Lee, Sangho; Kim, Hyeongdong
- 발행일
- 2009-03
- 유형
- Conference Paper
- 저널명
- Progress in Electromagnetics Research Symposium
- 권
- 2
- 페이지
- 1517 ~ 1523