N타입 결정질 실리콘 웨이퍼 두께 및 알루미늄 페이스트 도포량 변화에 따른 Bowing 및 Al doped p+ layer 형성 분석

초록

In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of 120 mu m, 130 mu m, 140 mu m. Formation of the Al doped p(+) layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped p(+) layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of 5.34 mg/cm(2) of Al paste, wafer bowing in a thickness of 140 mu m reached a maximum of 2.9 mm and wafer bowing in a thickness of 120 mu m reached a maximum of 4 mm. The study's results suggest that when considering uniformity and thickness of an Al doped p(+) layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is 4.72 mg/cm(2) in a wafer with a thickness of 120 mu m.

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