The instability change of flexible a-IGZO TFTs under different mechanical stress

초록

Amorphous InGaZnO (IGZO) thin film transistors (TFTs) were made on the polyimide (PI) substrate. We evaluated transistor performance and instability depends on mechanical stress, various bending radius (10mm, 5mm and 2mm) were applied to flexible substrate. The variation in the threshold voltage under NBTS was -0.58V (without bending)/-6.48V (2mm)

제목
The instability change of flexible a-IGZO TFTs under different mechanical stress
저자
Jeong, Hyun-JunOk, Kyung-ChulLee, Hyun-MoPark, Jin-Seong
발행일
2015-12-09
학회명
22nd International Display Workshops, IDW 2015
개최국가
일본
학회 개최일
2015-12-09 ~ 2015-12-11