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Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors
- Shin, Wonjun;
- Kim, Sangwoo;
- Koo, Ryun-Han;
- Kwon, Dongseok;
- Kim, Jae-Joon;
- ... Kwon, Daewoong;
- 외 2명
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5초록
In this study, we explore the low-frequency noise (LFN) characteristics of hafnium-zirconium ferroelectric junctionless poly-Si thin-film transistors (FE JL TFTs) with different channel lengths (<italic>L</italic>s). The findings reveal that the magnitude of 1/<italic>f</italic> noise decreases with a decrease in <italic>L</italic>, exhibiting the opposite trend from that of conventional FETs. Additionally, it is observed that the protrusion of poly-Si is more susceptible to damage from tensile stress during post-metal annealing in devices with longer L.
키워드
channel length, 1/f noise; ferroelectric junctionless thin-film transistor (FE JL TFT); low-frequency noise (LFN); NANOWIRE TRANSISTORS
- 제목
- Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors
- 저자
- Shin, Wonjun; Kim, Sangwoo; Koo, Ryun-Han; Kwon, Dongseok; Kim, Jae-Joon; Kwon, Deok-Hwang; Kwon, Daewoong; Lee, Jong-Ho
- 발행일
- 2023-06
- 유형
- Article
- 권
- 44
- 호
- 6
- 페이지
- 1003 ~ 1006