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Study of a thin Al2O3/TaN absorber stack on Ru-capped multilayers
- Kim, Tae Geun;
- Kim, Byung Hun;
- Kang, In-Yong;
- Chung, Yong-Chae;
- Ahn, Jinho;
- 외 4명
Citations
WEB OF SCIENCE
11Citations
SCOPUS
10초록
The glancing incident angle of an extreme ultraviolet lithography (EUVL) system requires minimal thickness of absorber patterns to suppress the shadow effect. High etch selectivity and low EUV reflectance can be obtained by a TaN absorber with a Ru buffer layer, but this structure does not offer enough DUV contrast (absorber/reflector) for inspection. A 20-nm-thick Al2O3 anti-reflection coating on top of 27-nm-TaN/2-nm-Ru is proposed as one of the optimum absorber stacks, which can give high EUV and DUV contrast with the thinnest structure ever reported.
키워드
EUVL; absorber; ARC; Al2O3; TaN; capping; buffer; EUV REFLECTOR; FABRICATION; CONTRAST; MASK
- 제목
- Study of a thin Al2O3/TaN absorber stack on Ru-capped multilayers
- 저자
- Kim, Tae Geun; Kim, Byung Hun; Kang, In-Yong; Chung, Yong-Chae; Ahn, Jinho; Lee, Seung Yoon; Park, In-Sung; Kim, Chung Yong; Lee, Nae-Eung
- 발행일
- 2006-12
- 유형
- Article; Proceedings Paper
- 권
- 49
- 페이지
- S721 ~ S725