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Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics
- Yang, Changjae;
- Lee, Sangsoo;
- Shin, Keun Wook;
- Oh, Sewoung;
- Park, Jinsub;
- 외 5명
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9초록
Optical properties of Si-doped GaInP grown on Ge-on-Si substrates were investigated using photoluminescence (PL). Similar to spontaneously ordered GaInP, two peaks were observed around 1.74 and 1.85 eV at 19 K; however, no satellite peaks were observed in the selected-area diffraction pattern. Based on temperature-dependent PL, the peak at 1.74 eV was attributed to the donor-acceptor pair transition caused by the amphoteric characteristics of Si and/or Ge from the dopant and/or substrate. In addition, the S-shape in the temperature dependence of the 1.85 eV peak was attributed to the interaction of the donor levels with the conduction band of GaInP.
키워드
SOLAR-CELLS; TEMPERATURE-DEPENDENCE; AMPHOTERIC BEHAVIOR; DOPANTS; EPITAXY; LAYERS
- 제목
- Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics
- 저자
- Yang, Changjae; Lee, Sangsoo; Shin, Keun Wook; Oh, Sewoung; Park, Jinsub; Kim, Chang-Zoo; Park, Won-Kyu; Ha, Seung-Kyu; Choi, Won Jun; Yoon, Euijoon
- 발행일
- 2011-08
- 유형
- Article
- 권
- 99
- 호
- 9
- 페이지
- 1 ~ 3