Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching

초록

We re-evaluate the performance of the <italic>p</italic>-type ferroelectric tunnel junction (FTJp) by introducing a perspective that includes non-ferroelectric (FE) resistive switching (RS). Contrary to the previous studies that FTJp exhibits significantly lower on-current density (<italic>J</italic>on) compared to the <italic>n</italic>-type FTJ (FTJn), our observations show that FTJp exhibits comparable <italic>J</italic>on to FTJn, thus achieving a higher tunneling electroresistance (TER) ratio. By analyzing low-frequency noise and temperature dependence of the fatigue rate, we demonstrate that the non-FE RS causes the increase in the <italic>J</italic>on and TER ratio of FTJp. Furthermore, we discover a new advantage of FTJp: It exhibits lower read noise than FTJn in the operating region governed by the FE RS.

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