Perpendicular Magnetic Anisotropy for CoFeBZr/MgO

Kil, Joon Pyo; Suh, Dong Ik; Bae, Gi Yoon; Choi, Won Joon; Kim, Guk Cheon; Noh, Seung Mo; Park, Wanjun

doi:10.1109/TMAG.2015.2441754

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Perpendicular Magnetic Anisotropy for CoFeBZr/MgO

Kil, Joon Pyo;
Suh, Dong Ik;
Bae, Gi Yoon;
Choi, Won Joon;
Kim, Guk Cheon;
... Park, Wanjun;
외 1명

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초록

We present the effects of Zr insertion (5%) in Co(65)Fe(20)B(10) on perpendicular magnetic anisotropy due to interfacial magnetization with MgO. Perpendicular magnetization is successfully formed with a stalking structure of Ta/CoFeBZr/MgO. The thickness margin for crossover of perpendicular and in-plane magnetization is increased to 1.52 nm with an enhancement of surface anisotropy energy because of reduced thickness dependence. The Gilbert damping parameter is determined to be as low as 0.004 based on the line width of ferromagnetic resonance. Moreover, the maximum effective anisotropy energy (K-eff) was 1.63 Merg/cm(3) for CoFeBZr.

키워드

Anisotropy energy; CoFeBZr; damping constant; magnetic tunnel junction (MTJ); perpendicular magnetic anisotropy (PMA); TUNNEL-JUNCTIONS; FILMS

제목: Perpendicular Magnetic Anisotropy for CoFeBZr/MgO

저자: Kil, Joon Pyo; Suh, Dong Ik; Bae, Gi Yoon; Choi, Won Joon; Kim, Guk Cheon; Noh, Seung Mo; Park, Wanjun

DOI: 10.1109/TMAG.2015.2441754

발행일: 2015-11

유형: Article; Proceedings Paper

저널명: IEEE Transactions on Magnetics

권: 51

호: 11

페이지: 1 ~ 4