Charge conversion effects of carbon nanotube network transistors by temperature for Al2O3 gate dielectric formation

초록

We report on the observation of the electrical characteristics for field effect transistors with random networks of single-walled carbon nanotubes induced by thermal contribution on gate dielectric formation. For the Al2O3 gate dielectric, only the deposition temperature gradually changes the electrical polarity from p-type to n-type. Competition between the electron transfer from the Al2O3 layers to the nanotube surface and the electron capture by the oxygen molecules adsorbed on the tube wall is critical for transport depending on the deposition temperature.

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