Electron Accumulation in LaAlO3/SrTiO3 Interfaces by the Broken Symmetry of Crystal Field

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초록

Using ab initio calculations, we studied structural characteristics of LaAlO3/SrTiO3 interface and related with its extraordinarily increased electric conductivity. In both of the two (LaAlO3)(m)/SrTiO3 heterojunction models (m = 3; 5), the oxygen atoms in the cells were displaced toward the n-type interface and the Ti-centered octahedron structure was compressed along the [001] direction by the atomic reconstructions at the (LaAlO3)(m)/(SrTiO3)(4) interfaces. As a result, the 3d(xy) orbital of the Ti atom was preferentially occupied due to the lowered energy state of the 3d(xy) orbital, which arises from the crystal field asymmetry. We reason that the extra electrons occupy the 3d(xy) orbital are accumulated at the interface by the displacement of the oxygen atoms. This accumulation contributes to the conductivity of the n-type interface.

키워드

GASOXIDES
제목
Electron Accumulation in LaAlO3/SrTiO3 Interfaces by the Broken Symmetry of Crystal Field
저자
Park, HayanChoi, HeechaePark, Hong-LaeChung, Yong-Chae
DOI
10.1143/JJAP.50.10PF03
발행일
2011-10
유형
Article
저널명
Japanese Journal of Applied Physics
50
10
페이지
1 ~ 4