Influence of precursor solution coating parameters on structural and dielectric properties of PZT thick films

  • Ahn, Byeong-Lib
  • Lee, Ju
  • Park, Sang-Man
  • Lee, Sung-Gap
Citations

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SCOPUS

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초록

Ferroelectric PZT(70/30) thick films were fabricated by the hybrid technique adding the sol-coating process to the normal screen-printing process to obtain a good densification. The screen-printing procedure was repeated four times to form PZT(70/30) thick films, and then PZT(30/70) precursor solution was spin-coated on the PZT thick films. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The thickness of all thick films was approximately 75-80 mu m. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 656 and 1.2%, respectively. The remanent polarization increased and coercive field decreased with increasing the number of sol coatings and the values of the PZT-6 thick films were 28.3 mu C/cm(2) and 13.1 kV/cm, respectively. Leakage current density of PZT-6 thick films was 2.4 x 10(-9)A/cm(2) at 100 kV/cm.

키워드

Crystal structureDensificationDielectric propertiesFerroelectric filmsProtective coatingsSol-gel process
제목
Influence of precursor solution coating parameters on structural and dielectric properties of PZT thick films
저자
Ahn, Byeong-LibLee, JuPark, Sang-ManLee, Sung-Gap
DOI
10.1007/s10853-007-2253-y
발행일
2008-05
유형
Article; Proceedings Paper
저널명
Journal of Materials Science
43
10
페이지
3408 ~ 3411