Investigation of ultrathin Pt/ZrO2-Al2O3-ZrO2/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy

Lee, Sang Yeon; Chang, Jaewan; Choi, Jaehyung; Kim, Younsoo; Lim, HanJin; Jeon, Hyeongtag; Seo, Hyungtak

doi:10.1016/j.cap.2016.12.004

상세 보기

Investigation of ultrathin Pt/ZrO2-Al2O3-ZrO2/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy

Lee, Sang Yeon;
Chang, Jaewan;
Choi, Jaehyung;
Kim, Younsoo;
Lim, HanJin;
외 2명

Citations

WEB OF SCIENCE

18

Citations

SCOPUS

16

초록

We report the Schottky barrier height (SBH) at metal-insulator interfaces in Pt/ZrO2-Al2O3-ZrO2(ZAZ)/TiN dynamic random access memory capacitors by analyzing the photoconductivity yield and internal photoemission (IPE) yield using IPE spectroscopy. The SBH values at the Pt/ZAZ and ZAZ/TiN interfaces in the Pt/ZAZ/TiN stack were found to be 2.77 and 2.18 eV, respectively. The SBH difference between the top electrode/oxide and bottom electrode/oxide interfaces is related to the work function difference between Pt and TiN, and the subgap defect state features (density and energy) of the given dielectric. By combining experimental analysis using IPE at the device level and ultraviolet photoelectron spectro (C) 2016 Elsevier B.V. All rights reserved.

키워드

MIM capacitor; Internal photoemission spectroscopy; Schottky barrier height; ATOMIC LAYER DEPOSITION; OXIDE; TRIMETHYLALUMINUM; AL2O3; WATER

제목: Investigation of ultrathin Pt/ZrO2-Al2O3-ZrO2/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy

저자: Lee, Sang Yeon; Chang, Jaewan; Choi, Jaehyung; Kim, Younsoo; Lim, HanJin; Jeon, Hyeongtag; Seo, Hyungtak

DOI: 10.1016/j.cap.2016.12.004

발행일: 2017-02

유형: Article

저널명: Current Applied Physics

권: 17

호: 2

페이지: 267 ~ 271