상세 보기
Electrical and Structural Analyses of Solution-Processed Li-Doped ZnO Thin Film Transistors Exposed to Ambient Conditions
- Kang, Tae Sung;
- Koo, Ja Hyun;
- Kim, Tae Yoon;
- Hong, Jin Pyo
Citations
WEB OF SCIENCE
16Citations
SCOPUS
17초록
We report the electrical and structural features of various Li-doped ZnO thin-film transistors (TFTs) grown via a chemical solution process at low temperature. The time-dependent transfer curves for the 10 at. % Li-doped ZnO TFTs, including second-order lowered off-current magnitude, exhibited only a negative shift of -1.07 V for 25 days, compared with a -21.83 V negative shift of undoped ZnO TFTs. Secondary ion mass spectroscopy and X-ray photoelectron spectroscopy observations clearly demonstrated the structure of Li dopants and the reduction of oxygen vacancies after appropriate doping processes. Finally, the nature of improved stability in the Li-doped ZnO TFTs is described.
키워드
LOW-TEMPERATURE; Ambient conditions; Chemical solutions; Doping process; Li-dopants; Low temperatures; Negative shift; Off-current; Reduction of oxygen; Second orders; Secondary ion mass spectroscopy; Solution-processed; Structural feature; Thin-film transistor (TFTs); Time-dependent; Transfer curves; ZnO
- 제목
- Electrical and Structural Analyses of Solution-Processed Li-Doped ZnO Thin Film Transistors Exposed to Ambient Conditions
- 저자
- Kang, Tae Sung; Koo, Ja Hyun; Kim, Tae Yoon; Hong, Jin Pyo
- 발행일
- 2013-01
- 유형
- Article
- 권
- 6
- 호
- 1
- 페이지
- 1 ~ 4