Solid-phase hetero epitaxial growth of alpha-phase formamidinium perovskite

초록

Conventional epitaxy of semiconductor films requires a compatible single crystalline substrate and precisely controlled growth conditions, which limit the price competitiveness and versatility of the process. We demonstrate substrate-tolerant nano-heteroepitaxy (NHE) of high-quality formamidinium-lead-tri-iodide (FAPbI(3)) perovskite films. The layered perovskite templates the solid-state phase conversion of FAPbI(3) from its hexagonal non-perovskite phase to the cubic perovskite polymorph, where the growth kinetics are controlled by a synergistic effect between strain and entropy. The slow heteroepitaxial crystal growth enlarged the perovskite crystals by 10-fold with a reduced defect density and strong preferred orientation. This NHE is readily applicable to various substrates used for devices. The proof-of-concept solar cell and light-emitting diode devices based on the NHE-FAPbI(3) showed efficiencies and stabilities superior to those of devices fabricated without NHE. Though literature reports metal halide perovskite epitaxial growth on various substrates, controlling film growth for device applications remains a challenge. Here, the authors report kinetic-controlled growth of halide perovskite thin films on various substrates via layered perovskite templates.

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