Low-power driven broadband phototransistor with a PbS/IGO/HfO2 stack

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초록

Broadband phototransistors have attracted considerable attention for numerous applications. Transistors based on amorphous oxide semiconductors (AOSs) provide an excellent photosensor platform because of the reasonably high mobility, extremely low off-state current, low-cost fabrication capability, and large-area scalability of AOSs. To create photo-responsivity for visible to near-infrared (NIR) light in an AOS transistor, lead sulfide quantum dots (PbS QDs) with a cutoff wavelength of 1300 nm were incorporated using a spin-coating process. The distance between PbS QDs was tailored by short tetrabutylammonium iodide ligands through a ligand exchange process. To reduce the operation voltage of the AOS phototransistor, indium gallium oxide (IGO) and hafnium oxide (HfO2) films were used as the semiconducting n-type channel and gate insulator, respectively. The IGO and HfO2 films were grown by plasma-enhanced atomic layer deposition (PEALD). The fabricated PbS QD/IGO phototransistors with an HfO2 gate insulator exhibited remarkable switching properties, such as a high carrier mobility of 20.1 cm(2) (V-1 s(-1)), a low subthreshold gate swing of 0.060 V decade(-1), and a high I-ON/OFF ratio of 2.2 x 10(8). Additionally, they also exhibited a photo-responsivity of 211 A W-1 and a detectivity of 8.9 x 10(11) Jones at 1300 nm even at an ultralow power operation (V-GS = +/- 1 V, V-DS = 0.1 V). Moreover, the fabricated devices showed a reasonable uniformity with near-zero V-TH in different batches and exhibited the modest degradation after the storage of 15 days to air atmosphere even though they were not encapsulated by a suitable passivation layer. The relevant physical rationale is discussed based on structural, optical, and electrical analyses. The results suggest that a phototransistor with a PbS QD/IGO/HfO2 stack can provide large-area scalable and low-voltage operation routes for visible to NIR imaging, communication, and sensing applications.

키워드

THIN-FILM-TRANSISTORATOMIC LAYER DEPOSITIONDOT SOLAR-CELLSOXIDE SEMICONDUCTORSHIGH-RESPONSIVITYLOW-VOLTAGEPHOTODETECTORSHETEROJUNCTIONCHANNEL
제목
Low-power driven broadband phototransistor with a PbS/IGO/HfO2 stack
저자
Xu, Hongwei한희성허재석김민재최철희김태규Chang, Joon-HyukJeong, Jae Kyeong
DOI
10.1039/d2tc04056e
발행일
2023-01
유형
Article
저널명
Journal of Materials Chemistry C
11
4
페이지
1569 ~ 1578