HVPE 법을 통한 GaN 성장 시 기판 종류 및 V/III 비에 따른 잔류 stress 특성 연구

초록

The characteristics of the residual stress on the types of the substrate was investigated with adjusting the V/IIIratio during GaN growth via the HVPE method. GaN single crystal layers were grown on a sapphire substrate and a GaNtemplate under the conditions of V/III ratio 5, 10, and 15, respectively. During GaN growth, multiple hexagonal pits inGaN single crystal were differently revealed in accordance with growth condition and substrate type, and their distributionand depth were measured via optical microscopy(OM) and white light interferometry(WLI). As a result, it was confirmedthat the distribution area and depth of hexagonal pit tended to increase as the V/III ratio increased. Moreover, it was foundthat the residual stress in GaN single crystal decreased as the distribution area and depth of the pit increased throughmeasuring micro Raman spectrophotometer. In the case of GaN growth according to substrate type, the GaN on GaNtemplate showed lower residual stress than the GaN grown on sapphire substrate.

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