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Hysteresis-Free Like, High Mobility p-Channel Tin Monoxide Thin-Film Transistor
- Kim, Taikyu;
- Kim, Se Eun;
- Jeong, Jae Kyeong
Citations
SCOPUS
0초록
We demonstrate high mobility p-channel tin monoxide (SnO) thin-film transistors with hysteresis free-like behavior. Intermediate alumina encapsulation in the middle of two postdeposition annealing processes significantly facilitates crystal growth, enabling considerable intertwining between crystals. Here, we report a simple method crystallizing the SnO thin-film.
키워드
high mobility; hysteresis-free; p-type oxide semiconductor; thin-film transistor; tin monoxide; Annealing process; C. thin film transistor (TFT); High mobility; Hysteresis free; P channels; P-type oxide semiconductors; Post deposition annealing; SIMPLE method; Thin-films; Tin monoxides
- 제목
- Hysteresis-Free Like, High Mobility p-Channel Tin Monoxide Thin-Film Transistor
- 저자
- Kim, Taikyu; Kim, Se Eun; Jeong, Jae Kyeong
- 발행일
- 2022-12
- 유형
- Conference paper
- 저널명
- Proceedings of the International Display Workshops
- 권
- 29
- 페이지
- 223 ~ 225
- 언어
- ENG
- 분량
- 3 페이지
- ISSN
- P 1883-2490