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초록
Undoped GaN layers with thickness of 278 μm were grown by hydride vapor phase epitaxy method. The samples with different threading dislocation densities of 9.0×106 cm-2 and 7.2×106 cm-2 were irradiated by electron-beam with the energy of 1 MeV and dose of 1×1015 cm-2. The defect states of the samples after electron beam irradiation were characterized by deep level transient spectroscopy measurement. After the electron-beam irradiation, the the defects appeared to states with the activation energies of 0.61 eV, 0.30 eV, and 0.57 eV.
키워드
Defect state; Electron beam irradiation; Electron-beam irradiations; GaN layers; Hydride vapor phase epitaxy; MeV-Electrons; Threading dislocation densities; Activation energy; Crystal growth; Deep level transient spectroscopy; Defects; Electron beams; Gallium alloys; Gallium nitride; Irradiation; Electrons
- 제목
- Dislocation related defect states in GaN irradiated with 1 MeV electron-beam
- 저자
- Lee, Dong Uk; Ha, Lim-Kyoung; Kim, Jin Soak; Kim, Eun Kyu; Koh, Eui Kwan; Han, Il Ki
- 발행일
- 2008-09
- 유형
- Conference Paper
- 권
- 5
- 호
- 6
- 페이지
- 1630 ~ 1632