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The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
- Kim, Jiye;
- Jang, Jaeyoung;
- Kim, Kyunghun;
- Kim, Haekyoung;
- Kim, Se Hyun;
- 외 1명
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79초록
Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field-effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate-bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed.
키워드
fluorinated polymers; gate-bias stabilities; organic field-effect transistors; SURFACE; CIRCUITS; MOBILITY; CHAIN
- 제목
- The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
- 저자
- Kim, Jiye; Jang, Jaeyoung; Kim, Kyunghun; Kim, Haekyoung; Kim, Se Hyun; Park, Chan Eon
- 발행일
- 2014-11
- 유형
- 정기 학술지(letter(letters to the editor))
- 권
- 26
- 페이지
- 7241 ~ 7246