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초록
In order to obtain a suitable back contacting electrode for Cu(InGa)Se-2-based photovoltaic devices, a molybdenum thin film was deposited using a chemical vapor transport (CVT) during the hydrogen reduction of MoO3 powder. A MoO2 thin film was successfully deposited on substrates by using the CVT of volatile MoO3(OH)(2) at 550 degrees C for 60 min in a H-2 atmosphere. The Mo thin film was obtained by reduction of MoO2 at 650 degrees C in a H-2 atmosphere. The Mo thin film on the substrate presented a low sheet resistance of approximately 1 Omega/sq.
키워드
solar cells; vapor deposition; hydrogen reduction; electrical properties; conductivity/resistivity; CHEMICAL-VAPOR TRANSPORT; SOLAR-CELLS; BEHAVIOR; OXIDE; MOO3(OH)(2)
- 제목
- MoO_3 분말의 수소환원을 통한 CIGS계 후면 전극용 Mo 박막제조
- 제목 (타언어)
- Fabrication of Mo Thin Film by Hydrogen Reduction of MoO_3 Powder for Back Contact Electrode of CIGS
- 저자
- Jo, Tae Sun; Kim, Se Hoon; Kim, Young Do
- 발행일
- 2011-02
- 유형
- Article
- 저널명
- 대한금속·재료학회지
- 권
- 49
- 호
- 2
- 페이지
- 187 ~ 191