Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructures(vol 200 ,109995 , 2025)

Han, Changhyeon; Kwak, Been; Choi, Joonhyeok; Kwon, Hyucknam; Kwon, Ki-Ryun; Choi, Rino; Kwon, Daewoong

doi:10.1016/j.mssp.2025.110080

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Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructures(vol 200 ,109995 , 2025)

Corrigendum to “Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructures” (Materials Science in Semiconductor Processing (2025) 200, (S1369800125007322), (10.1016/j.mssp.2025.109995))

Han, Changhyeon;
Kwak, Been;
Choi, Joonhyeok;
Kwon, Hyucknam;
Kwon, Ki-Ryun;
... Kwon, Daewoong;
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The authors regret that an important funding acknowledgment was unintentionally omitted in this paper. The corrected acknowledgment is as follows:

제목: Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructures(vol 200 ,109995 , 2025)

제목 (타언어): Corrigendum to “Structure-modulated phase stability and defect engineering in ferroelectric HfxZr1-xO2 heterostructures” (Materials Science in Semiconductor Processing (2025) 200, (S1369800125007322), (10.1016/j.mssp.2025.109995))

저자: Han, Changhyeon; Kwak, Been; Choi, Joonhyeok; Kwon, Hyucknam; Kwon, Ki-Ryun; Choi, Rino; Kwon, Daewoong

DOI: 10.1016/j.mssp.2025.110080

발행일: 2026-01

유형: Correction

저널명: Materials Science in Semiconductor Processing

권: 201

페이지: 1 ~ 1