Reliability modeling of Magnetic Tunnel Junction using MgO barrier

초록

We investigation of reliability modeling of magnetic tunneling junctions (MTJs) using MgO barrier is presented. Existing literature indicates that there are two major mechanisms involved in the Time Dependents Dielectric Breakdown (TDDB) of silicon dioxide. We verify that the thermochemical (linear E) model and the anode hole injection (1/E) model can be used in MgO-based MTJs. Furthermore, MTJs for maintaining reliability over ten years against dielectric breakdown was discussed.