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Reliability modeling of Magnetic Tunnel Junction using MgO barrier
- Lee, Jungmin;
- Choi, Chulmin;
- Oh, Youngtek;
- Sukegawa, Hiroaki;
- Mitani, Seiji;
- ... Song, Yun Heub
초록
We investigation of reliability modeling of magnetic tunneling junctions (MTJs) using MgO barrier is presented. Existing literature indicates that there are two major mechanisms involved in the Time Dependents Dielectric Breakdown (TDDB) of silicon dioxide. We verify that the thermochemical (linear E) model and the anode hole injection (1/E) model can be used in MgO-based MTJs. Furthermore, MTJs for maintaining reliability over ten years against dielectric breakdown was discussed.
- 제목
- Reliability modeling of Magnetic Tunnel Junction using MgO barrier
- 저자
- Lee, Jungmin; Choi, Chulmin; Oh, Youngtek; Sukegawa, Hiroaki; Mitani, Seiji; Song, Yun Heub
- 발행일
- 2014-09
- 유형
- Proceeding
- 저널명
- Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials,
- 페이지
- 88 ~ 89