Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film

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초록

We investigated the reversible resistive switching of poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) thin films sandwiched between Al electrodes. The J-V sweep curve showed a hysteretic behavior which depends on the polarity of the applied voltage bias. From the analysis of I-V curves, it was revealed that the charge transport through the junction was governed by the bulk space-charge-limited conduction (SCLC) model. Using transmission electron microscopy (TEM) analysis, it was confirmed that the initial high resistance state of PEDOT:PSS films is related with the segregation of PSS chains induced by redox reaction between a Al metal electrode and PEDOT:PSS film. Positive space charges present on the top region of PEDOT:PSS films can be proposed as a possible trap centers of electron trapping and detrapping process.

키워드

PEDOT:PSS; Resistive switching; TEM; EDS; MEMORY; BISTABILITY; DEVICES
제목
Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film
저자
Jeong, Hu Young; Kim, Jong Yun; Yoon, Tae Hyun; Choi, Sung-Yool
DOI
10.1016/j.cap.2009.12.011
발행일
2010-01
유형
Article; Proceedings Paper
저널명
Current Applied Physics
권
10
호
1
페이지
E46 ~ E49