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초록
To enhance the optical property of zinc oxide (ZnO) thin film, zinc sulfide (ZnS) thin films were formed on the interfaces of ZnO thin film as a passivation and a substrate layer. ZnO and ZnS thin films were deposited by atomic layer deposition (ALD) using diethyl zinc, H2O, and H2S as precursors. Investigations by X-ray diffraction and transmission electron microscopy showed that ZnS/ZnO/ZnS multi-layer thin films with clear boundaries were achieved by ALD and that each film layer had its own polycrystalline phase. The intensity of the photoluminescence of the ZnO thin film was enhanced as the thickness of the ZnO thin film increased and as ZnS passivation was applied onto the ZnO thin film interfaces.
키워드
Atomic layer deposition; Zinc oxide; Zinc sulfide; Photoluminescence; Multi-layer; ATOMIC LAYER DEPOSITION; ALUMINA TUBULAR MEMBRANES; ZINC-OXIDE; SUBSTRATE-TEMPERATURE; PORE REDUCTION; BN PARTICLES; AL2O3 FILMS; GROWTH; EPITAXY
- 제목
- Control of ZnO thin film surface by ZnS passivation to enhance photoluminescence
- 저자
- Hwang, Jeong-Yeon; Park, Sung Youl; Park, Jong-Ho; Kim, Jong-Nam; Koo, Sang Man; Ko, Chang Hyun
- 발행일
- 2012-01
- 유형
- Article
- 저널명
- Thin Solid Films
- 권
- 520
- 호
- 6
- 페이지
- 1832 ~ 1836