Characterization of nano-floating gate memory with ZnO nanoparticles embedded in polymeric matrix

초록

Metal oxide nanoparticles are embedded in a polyimide matrix by a chemical reaction between a metal thin film and polyamic acid. The electrical characteristics of ZnO nanoparticles are investigated with a floating gate capacitor structure by capacitance-voltage (C-V) measurement. The C-V characteristics resulting from metal deposition modulation and the existence of a SiO2 layer are also investigated. As a result, ZnO particles with a SiO2 tunneling barrier show a C-V hysteresis voltage gap of 2.8 V at 300 K. ZnO particles directly located on a Si substrate show a C-V hysteresis width of 1.5 V at 80 K. This electrical characterization is discussed for applications to nano floating-gate memory devices.

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