Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode

초록

Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a crossbar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of -1.6 V, retention time of >1 x 10(5) s with a memory margin of 9.2 x 10(5), program/erase endurance cycles of >10(2) with a memory margin of 8.4 x 10(5), and bending-fatigue-free cycles of similar to 1x10(3) with a memory margin (I-on/I-off) of 3.3 x 10(5).

키워드