상세 보기
Nitrogen behaviors in peald-grown sio2 films using n2o plasma reactant and its application in ald-izo tfts
- 김동규;
- Yoo, Kwang Su;
- Kim, Hye-Mi;
- Park, Jin-Seong
Citations
SCOPUS
0초록
We studied nitrogen (N) behaviors in plasma-enhanced atomic layer deposition (PEALD)-grown silicon dioxide (SiO2) using nitrous oxide (N2O) plasma reactant. The gradually improved breakdown phenomenon is attributed to N contents. However, although increase in the N contents, excess plasma power is degraded electrical characteristics. For applications of the SiO2 films using N2O plasma reactant, we fabricated indium-zinc oxide top-gate thin film transistors with SiO2 gate insulator (G.I). The stable both transfer characteristics and instability results are originated from decrease in oxygen vacancy in active layer by N2O plasma treatment during the G.I deposition.
키워드
Breakdown field; Display back-plane; Indium-zinc oxide; Memory device; N2O plasma; Oxide-based TFTs; PEALD; Power device; SiO2; Atomic layer deposition; II-VI semiconductors; Nitrogen; Nitrogen oxides; Nitrogen plasma; Oxide films; Plasma applications; Plasma stability; Silicon oxides; Thin film transistors; Thin films; Zinc oxide; Breakdown field; Display back-plane; Indium zinc oxides; N content; N2O plasma; Oxide-based TFT; Plasma reactants; Plasma-enhanced atomic layer deposition; Power devices; SiO2 film; Silica
- 제목
- Nitrogen behaviors in peald-grown sio2 films using n2o plasma reactant and its application in ald-izo tfts
- 저자
- 김동규; Yoo, Kwang Su; Kim, Hye-Mi; Park, Jin-Seong
- 발행일
- 2022-06
- 유형
- Conference Paper
- 권
- 53
- 호
- 1
- 페이지
- 1043 ~ 1046