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초록
A nonvolatile memory device with the multi-layered SiC nanocrystals embedded in the SiO2 dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The multi-layered SiC nanocrystals were formed by using post thermal annealing process. The transmission electron microscope analysis showed that the multi-layered SiC nanocrystals are created between the tunnel and the control oxide layers. The average size and density of the SiC nanocrystals were approximately 5 nm and 2x1012 cm-2, respectively. The memory window of nonvolatile memory devices with the multi-layered of SiC nanocrystals was about 2.7 V, and then it was maintained around 1.1 V after 105 sec.
키워드
Average size; Data storage; Electrical property; Memory window; Multi-layered; Non-volatile memory application; Nonvolatile memory devices; Oxide layer; Post-thermal annealing; Transmission electron microscope; Electric properties; Electron microscopes; Nonvolatile storage; Silicon carbide; Transmission electron microscopy; Nanocrystals
- 제목
- Multi-layered SiC nanocrystals embedded in SiO2 layer for nonvolatile memory application
- 저자
- Lee, Dong Uk; Lee, Tae Hee; Kim, Eun Kyu; Shin, Jin-Wook; Cho, Won-Ju
- 발행일
- 2009-04
- 유형
- Conference Paper
- 저널명
- Materials Research Society Symposium - Proceedings
- 권
- 1160
- 페이지
- 43 ~ 48