Tunable Ferroelectric Properties of HfO2-Based Oxides: Role of Aluminum Doping and Bottom Electrodes

Han, Changhyeon; Kwon, Ki Ryun; Jeong, Soi; Kwak, Been; Yim, Jiyong; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong

doi:10.1109/TED.2024.3517593

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Tunable Ferroelectric Properties of HfO2-Based Oxides: Role of Aluminum Doping and Bottom Electrodes

Han, Changhyeon;
Kwon, Ki Ryun;
Jeong, Soi;
Kwak, Been;
Yim, Jiyong;
... Kwon, Daewoong;
외 3명

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초록

We investigate the impact of Al concentrations and different bottom electrodes on the crystallinity, ferroelectricity, energy storage density (ESD), and oxygen defects in HfxZr1-xO2(HZO) materials. Our results reveal that these variations are strongly linked to oxygen vacancy (VO) formation and the stabilization of the tetragonal (t) phase. Higher Al concentrations enhance t-phase stability, suppressing the transition to the orthorhombic (o) phase. This effect, coupled with the bottom electrode configuration, plays a critical role in shaping the properties of HZO. These findings provide valuable guidelines for optimizing ferroelectric (FE) devices through precise control of doping levels and electrode materials.

키워드

Ferroelectric (FE); heterostructure; HfxZr1−xO2 (HZO); metal–FE–metal (MFM); morphotropic phase boundary (MPB); Aluminum oxide; Crystallinity; Defect density; Ferroelectric devices; Ferroelectric materials; Hafnium oxides; Oxygen vacancies; Semiconductor doping; Surface discharges

제목: Tunable Ferroelectric Properties of HfO2-Based Oxides: Role of Aluminum Doping and Bottom Electrodes

저자: Han, Changhyeon; Kwon, Ki Ryun; Jeong, Soi; Kwak, Been; Yim, Jiyong; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong

DOI: 10.1109/TED.2024.3517593

발행일: 2025-02

유형: Article in press

저널명: IEEE Transactions on Electron Devices

권: 72

호: 2

페이지: 635 ~ 639

언어: ENG

출판사: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

발행국가: 미국

분량: 5 페이지

ISSN: E 1557-9646
P 0018-9383