Enhanced of electrical characteristics of nano-crystal floating gate memory with In2O3 nano-particles embedded in polyimide

초록

We fabricated the nano-floating gate memory (NFGM) with In2O3 nano-particles embedded in polyimide gate insulators. Self-assembled In2O3 nano-particles were created by chemical reaction between the polymer precursor and the indium film. The particle size and density of In2O3 nano-particles were about 7 nm and 6 x 10(11) cm(-2), respectively. The electrical characterization of the NFGM with In2O3 nano-particles embedded in polyimide layer were measured and the memory window larger than 3.8 V was obtained from the fabricated NFGM devices due to the charging effects of In2O3 particles. Subthreshold swing, output current characteristics and retention time of fabricated NFGM devices were considerably improved by the post-annealing process in 3% hydrogen diluted H-2/N-2 ambient.

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