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Surface AcousticWave-Guided Reconfigurable Memristor
- Kim, Sihyeok;
- Lee, Jang Woo;
- Ryu, Hyeonseung;
- Kim, Taehoon;
- Ko, Hayoung;
- ... Jeong, Mun Seok;
- 외 13명
WEB OF SCIENCE
1SCOPUS
1초록
Neuromorphic computing requires memory elements that can emulate both nonvolatile and volatile operation. However, achieving reconfigurability without trade-offs in performance or device fatigue remains a critical challenge. Conventional electrically driven memristors face difficulties in maintaining repetitive volatile states while preserving their nonvolatile state, which poses a major challenge for achieving reliable reconfigurability. Here, we report a surface acoustic wave (SAW)-stimulated memristor using a two-dimensional (2D) transition metal dichalcogenide monolayer MoS2 that achieves reconfigurable memory operation in a reversible volatile mode enabled by acousto-electric modulation. SAW excitation provides contactless, strain-based control of the 2D material conductance for memristor operation, allowing dynamic and nondestructive volatile behavior without deteriorating the electrically programmed nonvolatile state. We leverage these tunable temporal dynamics to realize a SAW-driven memristive reservoir based on 2D monolayer MoS2, achieving 96.1% accuracy in a character classification task.
키워드
- 제목
- Surface AcousticWave-Guided Reconfigurable Memristor
- 제목 (타언어)
- Surface Acoustic Wave-Guided Reconfigurable Memristor
- 저자
- Kim, Sihyeok; Lee, Jang Woo; Ryu, Hyeonseung; Kim, Taehoon; Ko, Hayoung; Choi, Soo Ho; Kim, Young Chul; Qi, Kai; Novikov, Ilya V.; Nam, Jeong-Seok; Kim, Dong Hyeon; Suh, Hyeong Chan; Jeong, Mun Seok; Tung, Vincent; Kim, Ki Kang; Ahn, Yeong Hwan; Lee, Keekeun; Lee, Sungjoo; Jeon, Il
- 발행일
- 2026-07
- 유형
- Article; Early Access
- 저널명
- ACS Nano
- 권
- 20
- 호
- 29
- 페이지
- 20530 ~ 20542
- 언어
- ENG
- 출판사
- AMER CHEMICAL SOC
- 발행국가
- 미국
- 분량
- 13 페이지
- ISSN
- E 1936-086X
P 1936-0851