Surface AcousticWave-Guided Reconfigurable Memristor

Surface Acoustic Wave-Guided Reconfigurable Memristor
  • Kim, Sihyeok; 
  • Lee, Jang Woo; 
  • Ryu, Hyeonseung; 
  • Kim, Taehoon; 
  • Ko, Hayoung; 
  • ... Jeong, Mun Seok; 
  • 외 13명
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초록

Neuromorphic computing requires memory elements that can emulate both nonvolatile and volatile operation. However, achieving reconfigurability without trade-offs in performance or device fatigue remains a critical challenge. Conventional electrically driven memristors face difficulties in maintaining repetitive volatile states while preserving their nonvolatile state, which poses a major challenge for achieving reliable reconfigurability. Here, we report a surface acoustic wave (SAW)-stimulated memristor using a two-dimensional (2D) transition metal dichalcogenide monolayer MoS2 that achieves reconfigurable memory operation in a reversible volatile mode enabled by acousto-electric modulation. SAW excitation provides contactless, strain-based control of the 2D material conductance for memristor operation, allowing dynamic and nondestructive volatile behavior without deteriorating the electrically programmed nonvolatile state. We leverage these tunable temporal dynamics to realize a SAW-driven memristive reservoir based on 2D monolayer MoS2, achieving 96.1% accuracy in a character classification task.

키워드

surface acoustic wave; 2D transition metal dichalcogenide; neuromorphic computing; synaptic plasticity; reconfigurability; reservoir computing
제목
Surface AcousticWave-Guided Reconfigurable Memristor
제목 (타언어)
Surface Acoustic Wave-Guided Reconfigurable Memristor
저자
Kim, Sihyeok; Lee, Jang Woo; Ryu, Hyeonseung; Kim, Taehoon; Ko, Hayoung; Choi, Soo Ho; Kim, Young Chul; Qi, Kai; Novikov, Ilya V.; Nam, Jeong-Seok; Kim, Dong Hyeon; Suh, Hyeong Chan; Jeong, Mun Seok; Tung, Vincent; Kim, Ki Kang; Ahn, Yeong Hwan; Lee, Keekeun; Lee, Sungjoo; Jeon, Il
DOI
10.1021/acsnano.6c01958
발행일
2026-07
유형
Article; Early Access
저널명
ACS Nano
권
20
호
29
페이지
20530 ~ 20542