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Paper no P35: Improved stability of solution-processed ZnO thin-film transistor post-treated by ultraviolet annealing step
- Kang, Taesung;
- Koo, Jayhyun;
- Kim, Taeyoon ;
- Hong, Jinpyo
Citations
SCOPUS
0초록
We present electrical and structural features of solution- processed ZnO thin-film transistors (TFTs) grown via a chemical solution process post-treated by ultra violet (UV) annealing step at processing temperature below 250° C. The transfer curves for the UV annealed ZnO TFTs, including around two-order higher on-current magnitude reveals only a negative drift of -0.66 V in time for 15 days, compared with a -9.29 V negative drift of the conventionally thermally annealed ZnO TFTs at 300°C. The observation of X-ray photoelectron spectroscopy clearly demonstrates the significant reduction of non-lattice oxygen vacancies via proper UV annealing step. The nature of improved stability in the UV-annealed ZnO TFTs is also described.
키워드
Annealing; Oxygen vacancies; Processing; Semiconducting organic compounds; Thin film circuits; X ray photoelectron spectroscopy; Zinc oxide; Chemical solutions; Lattice oxygen vacancies; Processing temperature; Solution-processed; Stability of solutions; Structural feature; Transfer curves; Ultraviolet annealing; Thin film transistors
- 제목
- Paper no P35: Improved stability of solution-processed ZnO thin-film transistor post-treated by ultraviolet annealing step
- 저자
- Kang, Taesung; Koo, Jayhyun; Kim, Taeyoon ; Hong, Jinpyo
- DOI
- 10.1002/sdtp.4
- 발행일
- 2013-11
- 유형
- Conference Paper
- 권
- 44
- 페이지
- 119 ~ 122