Post-RTA effect on the electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET

초록

The effect of the surface roughness of strained Si grown on relaxed SiGe-on-insulator on the electrical characteristics of n-MOSFETs was investigated. The surface roughness-induced degradations of the driving current and leakage current were minimized by applying, after conventional rapid thermal annealing (RTA), an additional furnace annealing consisting of 30 min in a N-2 ambient at 500 degrees C. The improvements resulted from the post-RTA process decreasing the charge density of the interface state.

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