The effecs of oxygen partial pressures in Ge doped InGaO Thin Film Transistors

제목
The effecs of oxygen partial pressures in Ge doped InGaO Thin Film Transistors
저자
박진성
발행일
2013-07-05
학회명
the 16th International Symposium on the Physics of Semiconductors and Applications
개최지
Ramada Plaza Jeju hotel, Jeju, Koera