Resolution Enhancement in Extreme Ultraviolet Ptychography Using a Refined Illumination Probe and Small-Etendue Source

초록

Extreme ultraviolet (EUV) ptychography is a promising actinic mask metrology technique capable of providing aberration-free images with subwavelength resolution. However, its performance is fundamentally constrained by the strong absorption of EUV light and the limited detection of high-frequency diffraction signals, which are critical for resolving fine structural details. In this study, we demonstrate significant improvements in EUV ptychographic imaging by implementing an upgraded EUV source system with reduced source etendue and applying an illumination aperture to spatially refine the probe. This approach effectively enhances the photon flux and spatial coherence, resulting in an increased signal-to-noise ratio of the high-frequency diffraction components and an extended maximum detected spatial frequency. Simulations and experimental measurements using a Siemens star pattern confirmed that the refined probe enabled more robust phase retrieval and higher-resolution image reconstruction. Consequently, we achieved a half-pitch resolution of 46 nm, corresponding to a critical dimension of 11.5 nm at the wafer plane. These findings demonstrate the enhanced capability of EUV ptychography as a high-fidelity actinic metrology tool for next-generation EUV mask characterization.

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