ScholarWorks@한양대학교

상세 보기

Threading-dislocation generation and annihilation mechanism in relaxed SiGe film observed by in-situ TEM depending on annealing temperature

  • 박재근
제목
Threading-dislocation generation and annihilation mechanism in relaxed SiGe film observed by in-situ TEM depending on annealing temperature
저자
박재근
발행일
2016-05-05
학회명
4th Symposium for International Advanced Functional Materials & Devices
개최지
DoubleTree by Hilton Hotel San Francisco Airport

ScholarWorks@한양대학교

(04763) 서울특별시 성동구 왕십리로 222 Tel. +82-2-2220-1370 +82-2-2220-1366

COPYRIGHT © 한양대학교 All Rights Reserved.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.

You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.