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High-Performance Indium-Gallium Oxide Thin-Film-Transistors via Plasma-Enhanced Atomic-Layer-Deposition
- Hur, Jae Seok;
- Kim, Min Jae;
- Yoon, Seong Hun;
- Jeong, Jae Kyeong
Citations
SCOPUS
4초록
We report the fabrication of high-performance indium-gallium oxide (IGO) thin-film transistors (TFTs) via plasma-enhanced atomic-layer-deposition (PE-ALD) process with cation composition ratio variation. With accurate control of the composition ratio, IGO(12:3) TFTs showed stable characteristics along with high field-effect mobility (μFET) of 70.69 cm2/Vs. Furthermore by increasing the gallium ratio, IGO(6:3) TFTs showed extremely stable characteristics with threshold voltage (VTH) variations lower than 0.1 V in both positive bias stress (PBS) and negative bias stress (NBS) conditions.
키워드
atomic layer deposition; cation composition; indium gallium oxide; Oxide semiconductor; thin-film transistor; Atoms; Field effect transistors; Gallium compounds; MOS devices; Oxide semiconductors; Positive ions; Semiconducting indium compounds; Thin film circuits; Thin film transistors; Thin films; Threshold voltage
- 제목
- High-Performance Indium-Gallium Oxide Thin-Film-Transistors via Plasma-Enhanced Atomic-Layer-Deposition
- 저자
- Hur, Jae Seok; Kim, Min Jae; Yoon, Seong Hun; Jeong, Jae Kyeong
- 발행일
- 2023-05
- 유형
- Conference paper
- 권
- 54
- 호
- 1
- 페이지
- 1826 ~ 1828
- 언어
- ENG
- 분량
- 3 페이지
- ISSN
- E 2168-0159
P 0097-966X